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july 2003 the following document specifies spansion memory products that are now offered by both advanced micro devices and fujitsu. although the document is marked with the name of the company that orig- inally developed the specification, these products will be offered to cu stomers of both amd and fujitsu. continuity of specifications there is no change to this datasheet as a result of offering the device as a spansion product. any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. futu re routine revisions will occur when appropriate, and changes will be noted in a revision summary. continuity of ordering part numbers amd and fujitsu continue to support existing part numbers beginning with ?am? and ?mbm?. to order these products, please use on ly the ordering part numbers listed in this document. for more information please contact your local amd or fujitsu sales office for additional information about spansion memory solutions. am29f200b data sheet publication number 21526 revision d amendment 0 issue date november 29, 2000
this data sheet states amds current technical specifications regarding the products described herein. this data sheet may be revised by subsequent versions or modifications due to changes in technical specifications. publication# 21526 rev: d amendment/ 0 issue date: november 29, 2000 am29f200b 2 megabit (256 k x 8-bit/128 k x 16-bit) cmos 5.0 volt-only, boot sector flash memory distinctive characteristics n 5.0 v for read and write operations minimizes system level power requirements n manufactured on 0.32 m process technology compatible with 0.5 m am29f200a device n high performance access times as fast as 45 ns n low power consumption 20 ma typical active read current (byte mode) 28 ma typical active read current for (word mode) 30 ma typical program/erase current 1 a typical standby current n sector erase architecture one 16 kbyte, two 8 kbyte, one 32 kbyte, and three 64 kbyte sectors (byte mode) one 8 kword, two 4 kword, one 16 kword, and three 32 kword sectors (word mode) supports full chip erase sector protection features: a hardware method of locking a sector to prevent any program or erase operations within that sector sectors can be locked via programming equipment temporary sector unprotect feature allows code changes in previously locked sectors n top or bottom boot block configurations available n embedded algorithms embedded erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors embedded program algorithm automatically writes and verifies data at specified addresses n minimum 1,000,000 write/erase cycles guaranteed n 20-year data retention at 125 c reliable operation for the life of the system n package options 44-pin so 48-pin tsop known good die (kgd) (see publication number 21257) n compatible with jedec standards pinout and software compatible with single-power-supply flash superior inadvertent write protection n data# polling and toggle bit detects program or erase cycle completion n ready/busy# output (ry/by#) hardware method for detection of program or erase cycle completion n erase suspend/erase resume supports reading data from a sector not being erased n hardware reset# pin resets internal state machine to the reading array data
2 am29f200b general description the am29f200b is a 2 mbit, 5.0 volt-only flash memory organized as 262,144 bytes or 131,072 words. the 8 bits of data appear on dq0Cdq7; the 16 bits on dq0Cdq15. the am29f200b is offered in 44-pin so and 48-pin tsop packages. the device is also avail- able in known good die (kgd) form. for more information, refer to publication number 21257. this device is designed to be programmed in-system with the standard system 5.0 volt v cc supply. a 12.0 volt v pp is not required for program or erase operations. the device can also be reprogrammed in standard eprom programmers. this device is manufactured using amds 0.32 m process technology, and offers all the features and benefits of the am29f200a, which was manufactured using 0.5 m process technology. the standard device offers access times of 45, 50, 55, 70, 90, and 120 ns, allowing operation of high-speed microprocessors without wait states. to eliminate bus contention the device has separate chip enable (ce#), write enable (we#) and output enable (oe#) controls. the device requires only a single 5.0 volt power supply for both read and write functions. internally generated and regulated voltages are provided for the program and erase operations. the device is entirely command set compatible with the jedec single-power-supply flash standard . com- mands are written to the command register using standard microprocessor write timings. register con- tents serve as input to an internal state-machine that controls the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase operations. reading data out of the device is similar to reading from other flash or eprom devices. device programming occurs by executing the program command sequence. this initiates the embedded program algorithman internal algorithm that auto- matically times the program pulse widths and verifies proper cell margin. device erasure occurs by executing the erase command sequence. this initiates the embedded erase algorithman internal algorithm that automati- cally preprograms the array (if it is not already programmed) before executing the erase operation. during erase, the device automatically times the erase pulse widths and verifies proper cell margin. the host system can detect whether a program or erase operation is complete by observing the ry/by# pin, or by reading the dq7 (data# polling) and dq6/ dq2 (toggle) status bits . after a program or erase cycle has been completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. hardware data protection measures include a low v cc detector that automatically inhibits write opera- tions during power transitions. the hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. this can be achieved via programming equipment. the erase suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. true background erase can thus be achieved. the hardware reset# pin terminates any operation in progress and resets the internal state machine to reading array data. the reset# pin may be tied to the system reset circuitry. a system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the flash memory. the system can place the device into the standby mode . power consumption is greatly reduced in this mode. amds flash technology combines years of flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effective- ness. the device electrically erases all bits within a sector simultaneously via fowler-nordheim tunneling. the data is programmed using hot electron injection.
am29f200b 3 table of contents product selector guide . . . . . . . . . . . . . . . . . . . . . 4 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 connection diagrams . . . . . . . . . . . . . . . . . . . . . . 5 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 7 logic symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 ordering information . . . . . . . . . . . . . . . . . . . . . . . 8 device bus operations . . . . . . . . . . . . . . . . . . . . . 9 table 1. am29f200b device bus operations ..................................9 word/byte configuration .......................................................... 9 requirements for reading array data ..................................... 9 writing commands/command sequences .............................. 9 program and erase operation status .................................... 10 standby mode ........................................................................ 10 reset#: hardware reset pin ............................................... 10 output disable mode .............................................................. 10 table 2. am29f200t top boot block sector address table .........11 table 3. am29f200b bottom boot block sector address table ....11 autoselect mode ..................................................................... 11 table 4. am29f200b autoselect codes (high voltage method) ....12 sector protection/unprotection ............................................... 12 temporary sector unprotect .................................................. 12 figure 1. temporary sector unprotect operation........................... 12 hardware data protection ...................................................... 12 low v cc write inhibit ......................................................................13 write pulse glitch protection ........................................................13 logical inhibit ..................................................................................13 power-up write inhibit ....................................................................13 command definitions . . . . . . . . . . . . . . . . . . . . . 13 reading array data ................................................................ 13 reset command ..................................................................... 13 autoselect command sequence ............................................ 13 word/byte program command sequence ............................. 14 figure 2. program operation .......................................................... 14 chip erase command sequence ........................................... 14 sector erase command sequence ........................................ 15 erase suspend/erase resume commands ........................... 15 figure 3. erase operation............................................................... 16 command definitions ............................................................. 17 table 5. am29f200b command definitions ...................................17 dq7: data# polling ................................................................. 18 figure 4. data# polling algorithm ................................................... 18 ry/by#: ready/busy# ........................................................... 19 dq6: toggle bit i .................................................................... 19 dq2: toggle bit ii ................................................................... 19 reading toggle bits dq6/dq2 .............................................. 19 dq5: exceeded timing limits ................................................ 20 dq3: sector erase timer ....................................................... 20 figure 5. toggle bit algorithm........................................................ 20 table 6. write operation status ..................................................... 21 absolute maximum ratings. . . . . . . . . . . . . . . . . 22 operating ranges . . . . . . . . . . . . . . . . . . . . . . . . . 22 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . 23 ttl/nmos compatible .......................................................... 23 cmos compatible .................................................................. 24 test conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 25 figure 8. test setup....................................................................... 25 table 7. test specifications ........................................................... 25 key to switching waveforms. . . . . . . . . . . . . . . . 25 ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . 26 read operations .................................................................... 26 figure 9. read operations timings ............................................... 26 hardware reset (reset#) .................................................... 27 figure 10. reset# timings .......................................................... 27 word/byte configuration (byte#) ...................................... 28 figure 11. byte# timings for read operations............................ 28 figure 12. byte# timings for write operations ............................ 28 erase/program operations ..................................................... 29 figure 13. program operation timings .......................................... 30 figure 14. chip/sector erase operation timings .......................... 31 figure 15. data# polling timings (during embedded algorithms). 32 figure 16. toggle bit timings (during embedded algorithms) ...... 32 figure 17. dq2 vs. dq6................................................................. 33 temporary sector unprotect .................................................. 33 figure 18. temporary sector unprotect timing diagram .............. 33 alternate ce# controlled erase/program operations ............ 34 figure 19. alternate ce# controlled write operation timings ...... 35 erase and programming performance . . . . . . . . 36 latchup characteristics . . . . . . . . . . . . . . . . . . . . 36 tsop and so pin capacitance . . . . . . . . . . . . . . 36 data retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 physical dimensions . . . . . . . . . . . . . . . . . . . . . . 37 so 04444-pin small outline package ................................ 37 ts 04848-pin standard thin small outline package ......... 38 tsr04848-pin reverse thin small outline package ......... 39 revision summary . . . . . . . . . . . . . . . . . . . . . . . . 40 revision a (july 1998) ............................................................ 40 revision b (january 1999) ..................................................... 40 revision b+1 (april 12, 1999) ................................................. 40 revision b+2 (july 2, 1999) .................................................... 40 revision c (november 12, 1999) ........................................... 40 revision d (november 29, 2000) ........................................... 40
4 am29f200b product selector guide block diagram family part number am29f200b speed option v cc = 5.0 v 5% -45 -50 v cc = 5.0 v 10% -55 -70 -90 -120 max access time, ns (t acc ) 4550557090120 max ce# access time, ns (t ce ) 4550557090120 max oe# access time, ns (t oe ) 303030303550 erase voltage generator input/output buffers data latch y-gating cell matrix x-decoder y-decoder address latch chip enable output enable logic pgm voltage generator timer v cc detector state control command register we# ce# oe# a0Ca16 stb stb dq0Cdq15 ry/by# buffer ry/by# byte# reset# a-1 v cc v ss
am29f200b 5 connection diagrams this device is also available in known good die (kgd) form. refer to publication number 21257 for more information. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 nc ry/by# nc a7 a6 a5 a4 a3 a2 a1 a0 ce# v ss oe# dq0 dq8 dq1 dq9 dq2 dq10 dq3 dq11 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 reset# we# a8 a9 a10 a11 a12 a13 a14 a15 a16 byte# v ss dq15/a-1 dq7 dq14 dq6 dq13 dq5 dq12 dq4 v cc so
6 am29f200b connection diagrams this device is also available in known good die (kgd) form. refer to publication number 21257 for more information. 1 16 2 3 4 5 6 7 8 17 18 19 20 21 22 23 24 9 10 11 12 13 14 15 a16 dq2 byte# v ss dq15/a-1 dq7 dq14 dq6 dq13 dq9 dq1 dq8 dq0 oe# v ss ce# a0 dq5 dq12 dq4 v cc dq11 dq3 dq10 48 33 47 46 45 44 43 42 41 40 39 38 37 36 35 34 25 32 31 30 29 28 27 26 a15 nc a14 a13 a12 a11 a10 a9 a8 nc nc we# reset# nc nc ry/by# a1 nc a7 a6 a5 a4 a3 a2 standard tsop 1 16 2 3 4 5 6 7 8 17 18 19 20 21 22 23 24 9 10 11 12 13 14 15 48 33 47 46 45 44 43 42 41 40 39 38 37 36 35 34 25 32 31 30 29 28 27 26 a16 dq2 byte# v ss dq15/a-1 dq7 dq14 dq6 dq13 dq9 dq1 dq8 dq0 oe# v ss ce# a0 dq5 dq12 dq4 v cc dq11 dq3 dq10 a15 nc a14 a13 a12 a11 a10 a9 a8 nc nc we# reset# nc nc ry/by# a1 nc a7 a6 a5 a4 a3 a2 reverse tsop
am29f200b 7 pin configuration a0Ca16 = 17 addresses dq0Cdq14 = 15 data inputs/outputs dq15/a-1 = dq15 (data input/output, word mode), a-1 (lsb address input, byte mode) byte# = selects 8-bit or 16-bit mode ce# = chip enable oe# = output enable we# = write enable reset# = hardware reset pin, active low ry/by# = ready/busy output v cc = +5.0 v single power supply (see product selector guide for device speed ratings and voltage supply tolerances) v ss = device ground nc = pin not connected internally logic symbol 17 16 or 8 dq0Cdq15 (a-1) a0Ca16 ce# oe# we# reset# byte# ry/by#
8 am29f200b ordering information standard products amd standard products are available in several packages and operating ranges. the order number (valid combination) is formed by a combination of the following: valid combinations valid combinations list configurations planned to be sup- ported in volume for this device. consult the local amd sales office to confirm availability of specific valid combinations and to check on newly released combinations. am29f200b t -45 e c temperature range c = commercial (0 c to +70 c) i = industrial (C40 c to +85 c) e = extended (C55 c to +125 c) package type e = 48-pin thin small outline package (tsop) standard pinout (ts 048) f = 48-pin thin small outline package (tsop) reverse pinout (tsr048) s = 44-pin small outline package (so 044 ) this device is also available in known good die (kgd) form. see publication number 21257 for more information. speed option see product selector guide and valid combinations boot code sector architecture t = top sector b = bottom sector device number/description am29f200b 2 megabit (256 k x 8-bit/128 k x 16-bit) cmos flash memory 5.0 volt-only program and erase valid combinations v cc voltage am29f200bt-45, am29f200bb-45 ec, ei, fc, fi, sc, si 5.0 v 5% am29f200bt-50, am29f200bb-50 ec, ei, ee, fc, fi, fe, sc, si, se am29f200bt-55, am29f200bb-55 5.0 v 10% am29f200bt-70, am29f200bb-70 am29f200bt-90, am29f200bb-90 am29f200bt-120, am29f200bb-120
am29f200b 9 device bus operations this section describes the requirements and use of the device bus operations, which are initiated through the internal command register. the command register itself does not occupy any addressable memory loca- tion. the register is composed of latches that store the commands, along with the address and data informa- tion needed to execute the command. the contents of the register serve as inputs to the internal state machine. the state machine outputs dictate the func- tion of the device. the appropriate device bus operations table lists the inputs and control levels required, and the resulting output. the following sub- sections describe each of these operations in further detail. table 1. am29f200b device bus operations legend: l = logic low = v il , h = logic high = v ih , v id = 12.0 0.5 v, x = dont care, d in = data in, d out = data out, a in = address in note: see the sections sector group protection and temporary sector unprotect for more information. word/byte configuration the byte# pin controls whether the device data i/o pins dq15Cdq0 operate in the byte or word configura- tion. if the byte# pin is set at logic 1, the device is in word configuration, dq15Cdq0 are active and con- trolled by ce# and oe#. if the byte# pin is set at logic 0, the device is in byte configuration, and only data i/o pins dq0Cdq7 are active and controlled by ce# and oe#. the data i/o pins dq8Cdq14 are tri-stated, and the dq15 pin is used as an input for the lsb (a-1) address function. requirements for reading array data to read array data from the outputs, the system must drive the ce# and oe# pins to v il . ce# is the power control and selects the device. oe# is the output control and gates array data to the output pins. we# should remain at v ih . on x16 (word-wide) devices, the byte# pin determines whether the device outputs array data in words or bytes. the internal state machine is set for reading array data upon device power-up, or after a hardware reset. this ensures that no spurious alteration of the memory content occurs during the power transition. no command is necessary in this mode to obtain array data. standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. the device remains enabled for read access until the command register contents are altered. see reading array data for more information. refer to the ac read operations table for timing specifica- tions and to the read operations timings diagram for the timing waveforms. i cc1 in the dc characteristics table represents the active current specification for reading array data. writing commands/command sequences to write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive we# and ce# to v il , and oe# to v ih . on x16 (word-wide) devices, for program operations, the byte# pin determines whether the device accepts program data in bytes or words. refer to word/byte configuration for more information. operation ce# oe# we# reset# a0Ca16 dq0Cdq7 dq8Cdq15 byte# = v ih byte# = v il read l l h h a in d out d out high-z write l h l h a in d in d in high-z cmos standby v cc 0.5 v x x v cc 0.5 v x high-z high-z high-z ttl standby h x x h x high-z high-z high-z output disable l h h h x high-z high-z high-z hardware reset x x x l x high-z high-z high-z temporary sector unprotect (see note) xxx v id a in d in d in x
10 am29f200b an erase operation can erase one sector, multiple sec- tors, or the entire device. the sector address tables indicate the address space that each sector occupies. a sector address consists of the address bits required to uniquely select a sector. see the command defini- tions section for details on erasing a sector or the entire chip, or suspending/resuming the erase operation. after the system writes the autoselect command sequence, the device enters the autoselect mode. the system can then read autoselect codes from the internal register (which is separate from the memory array) on dq7Cdq0. standard read cycle timings apply in this mode. refer to the autoselect mode and autoselect command sequence sections for more information. i cc2 in the dc characteristics table represents the active current specification for the write mode. the ac characteristics section contains timing specification tables and timing diagrams for write operations. program and erase operation status during an erase or program operation, the system may check the status of the operation by reading the status bits on dq7Cdq0. standard read cycle timings and i cc read specifications apply. refer to write operation status for more information, and to each ac charac- teristics section in the appropriate data sheet for timing diagrams. standby mode when the system is not reading or writing to the device, it can place the device in the standby mode. in this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, inde- pendent of the oe# input. the device enters the cmos standby mode when ce# and reset# pins are both held at v cc 0.5 v. (note that this is a more restricted voltage range than v ih .) the device enters the ttl standby mode when ce# and reset# pins are both held at v ih . the device requires standard access time (t ce ) for read access when the device is in either of these standby modes, before it is ready to read data. the device also enters the standby mode when the reset# pin is driven low. refer to the next section, reset#: hardware reset pin. if the device is deselected during erasure or program- ming, the device draws active current until the operation is completed. in the dc characteristics tables, i cc3 represents the standby current specification. reset#: hardware reset pin the reset# pin provides a hardware method of reset- ting the device to reading array data. when the system drives the reset# pin low for at least a period of t rp , the device immediately terminates any operation in progress, tristates all data output pins, and ignores all read/write attempts for the duration of the reset# pulse. the device also resets the internal state machine to reading array data. the operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. current is reduced for the duration of the reset# pulse. when reset# is held at v il , the device enters the ttl standby mode; if reset# is held at v ss 0.5 v, the device enters the cmos standby mode. the reset# pin may be tied to the system reset cir- cuitry. a system reset would thus also reset the flash memory, enabling the system to read the boot-up firm- ware from the flash memory. if reset# is asserted during a program or erase oper- ation, the ry/by# pin remains a 0 (busy) until the internal reset operation is complete, which requires a time of t ready (during embedded algorithms). the system can thus monitor ry/by# to determine whether the reset operation is complete. if reset# is asserted when a program or erase operation is not executing (ry/by# pin is 1), the reset operation is completed within a time of t ready (not during embedded algo- rithms). the system can read data t rh after the reset# pin returns to v ih . refer to the ac characteristics tables for reset# parameters and timing diagram. output disable mode when the oe# input is at v ih , output from the device is disabled. the output pins are placed in the high imped- ance state.
am29f200b 11 table 2. am29f200t top boot block sector address table table 3. am29f200b bottom boot block sector address table note for tables 2 and 3: address range is a16:a-1 in byte mode and a16:a0 in word mode. see the word/byte configuration sectionfor more information. autoselect mode the autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on dq7Cdq0. this mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. however, the autoselect codes can also be accessed in-system through the command register. when using programming equipment, the autoselect mode requires v id (11.5 v to 12.5 v) on address pin a9. address pins a6, a1, and a0 must be as shown in autoselect codes (high voltage method) table. in addi- tion, when verifying sector protection, the sector address must appear on the appropriate highest order address bits. refer to the corresponding sector address tables. the command definitions table shows the remaining address bits that are dont care. when all necessary bits have been set as required, the programming equipment may then read the corre- sponding identifier code on dq7Cdq0. to access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in the command defini- tions table. this method does not require v id . see autoselect command sequence for details on using the autoselect mode. sector a16 a15 a14 a13 a12 sector size (kbytes/ kwords) address range (in hexadecimal) (x8) address range (x16) address range sa0 0 0 x x x 64/32 00000hC0ffffh 00000hC07fffh sa1 0 1 x x x 64/32 10000hC1ffffh 08000hC0ffffh sa2 1 0 x x x 64/32 20000hC2ffffh 10000hC17fffh sa3 1 1 0 x x 32/16 30000hC37fffh 18000hC1bfffh sa4 1 1 1 0 0 8/4 38000hC39fffh 1c000hC1cfffh sa5 1 1 1 0 1 8/4 3a000hC3bfffh 1d000hC1dfffh sa6 1 1 1 1 x 16/8 3c000hC3ffffh 1e000hC1ffffh sector a16 a15 a14 a13 a12 sector size (kbytes/ kwords) address range (in hexadecimal) (x8) address range (x16) address range sa0 0 0 0 0 x 16/8 00000hC03fffh 00000hC01fffh sa1 0 0 0 1 0 8/4 04000hC05fffh 02000hC02fffh sa2 0 0 0 1 1 8/4 06000hC07fffh 03000hC03fffh sa3 0 0 1 x x 32/16 08000hC0ffffh 04000hC07fffh sa4 0 1 x x x 64/32 10000hC1ffffh 08000hC0ffffh sa5 1 0 x x x 64/32 20000hC2ffffh 10000hC17fffh sa6 1 1 x x x 64/32 30000hC3ffffh 18000hC1ffffh
12 am29f200b table 4. am29f200b autoselect codes (high voltage method) l = logic low = v il , h = logic high = v ih , sa = sector address, x = dont care. sector protection/unprotection the hardware sector protection feature disables both program and erase operations in any sector. the hard- ware sector unprotection feature re-enables both program and erase operations in previously protected sectors. sector protection/unprotection must be implemented using programming equipment. the procedure requires a high voltage (v id ) on address pin a9 and the control pins. details on this method are provided in a supplement, publication number 20551. contact an amd representative to obtain a copy of the appropriate document. the device is shipped with all sectors unprotected. amd offers the option of programming and protecting sectors at its factory prior to shipping the device through amds expressflash? service. contact an amd representative for details. it is possible to determine whether a sector is protected or unprotected. see autoselect mode for details. temporary sector unprotect this feature allows temporary unprotection of previ- ously protected sectors to change data in-system. the sector unprotect mode is activated by setting the reset# pin to v id . during this mode, formerly pro- tected sectors can be programmed or erased by selecting the sector addresses. once v id is removed from the reset# pin, all the previously protected sectors are protected again. figure 1 shows the algo- rithm, and the temporary sector unprotect diagram (figure 18) shows the timing waveforms, for this feature. figure 1. temporary sector unprotect operation hardware data protection the command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to the command defi- nitions table). in addition, the following hardware data protection measures prevent accidental erasure or pro- description mode ce# oe# we# a16 to a12 a11 to a10 a9 a8 to a7 a6 a5 to a2 a1 a0 dq8 to dq15 dq7 to dq0 manufacturer id : amd l l h x x v id xlxll x 01h device id: am29f200b (top boot block) word l l h xxv id xlxlh 22h 51h byte l l h x 51h device id: am29f200b (bottom boot block) word l l h xxv id xlxlh 22h 57h byte l l h x 57h sector protection verification l l h sa x v id xlxhl x 01h (protected) x 00h (unprotected) start perform erase or program operations reset# = v ih temporary sector unprotect completed (note 2) reset# = v id (note 1) notes: 1. all protected sectors unprotected. 2. all previously protected sectors are protected once again.
am29f200b 13 gramming, which might otherwise be caused by spurious system level signals during v cc power-up and power-down transitions, or from system noise. low v cc write inhibit when v cc is less than v lko , the device does not accept any write cycles. this protects data during v cc power-up and power-down. the command register and all internal program/erase circuits are disabled, and the device resets. subsequent writes are ignored until v cc is greater than v lko . the system must provide the proper signals to the control pins to prevent uninten- tional writes when v cc is greater than v lko . write pulse glitch protection noise pulses of less than 5 ns (typical) on oe#, ce# or we# do not initiate a write cycle. logical inhibit write cycles are inhibited by holding any one of oe# = v il , ce# = v ih or we# = v ih . to initiate a write cycle, ce# and we# must be a logical zero while oe# is a logical one. power-up write inhibit if we# = ce# = v il and oe# = v ih during power up, the device does not accept commands on the rising edge of we#. the internal state machine is automatically reset to reading array data on power-up. command definitions writing specific address and data commands or sequences into the command register initiates device operations. the command definitions table defines the valid register command sequences. writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. all addresses are latched on the falling edge of we# or ce#, whichever happens later. all data is latched on the rising edge of we# or ce#, whichever happens first. refer to the appropriate timing diagrams in the ac characteristics section. reading array data the device is automatically set to reading array data after device power-up. no commands are required to retrieve data. the device is also ready to read array data after completing an embedded program or embedded erase algorithm. after the device accepts an erase suspend command, the device enters the erase suspend mode. the system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. after completing a programming operation in the erase suspend mode, the system may once again read array data with the same exception. see erase suspend/erase resume commands for more infor- mation on this mode. the system must issue the reset command to re- enable the device for reading array data if dq5 goes high, or while in the autoselect mode. see the reset command section, next. see also requirements for reading array data in the device bus operations section for more information. the read operations table provides the read parame- ters, and read operation timings diagram shows the timing diagram. reset command writing the reset command to the device resets the device to reading array data. address bits are dont care for this command. the reset command may be written between the sequence cycles in an erase command sequence before erasing begins. this resets the device to reading array data. once erasure begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in a program command sequence before programming begins. this resets the device to reading array data (also applies to programming in erase suspend mode). once programming begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in an autoselect command sequence. once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during erase suspend). if dq5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during erase suspend). autoselect command sequence the autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. the command definitions table shows the address and data requirements. this method is an alternative to that shown in the autoselect codes (high voltage
14 am29f200b method) table, which is intended for prom program- mers and requires v id on address bit a9. the autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. the device then enters the autoselect mode, and the system may read at any address any number of times, without initiating another command sequence. a read cycle at address xx00h retrieves the manufac- turer code. a read cycle at address xx01h in word mode (or 02h in byte mode) returns the device code. a read cycle containing a sector address (sa) and the address 02h in word mode (or 04h in byte mode) returns 01h if that sector is protected, or 00h if it is unprotected. refer to the sector address tables for valid sector addresses. the system must write the reset command to exit the autoselect mode and return to reading array data. word/byte program command sequence the system may program the device by byte or word, on depending on the state of the byte# pin. program- ming is a four-bus-cycle operation. the program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. the program address and data are written next, which in turn initiate the embedded program algorithm. the system is not required to provide further controls or tim- ings. the device automatically provides internally generated program pulses and verify the programmed cell margin. the command definitions take shows the address and data requirements for the byte program command sequence. when the embedded program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. the system can determine the status of the program operation by using dq7, dq6, or ry/by#. see write operation status for information on these status bits. any commands written to the device during the embedded program algorithm are ignored. note that a hardware reset immediately terminates the program- ming operation. the program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. programming is allowed in any sequence and across sector boundaries. a bit cannot be programmed from a 0 back to a 1. attempting to do so may halt the operation and set dq5 to 1, or cause the data# polling algorithm to indicate the operation was suc- cessful. however, a succeeding read will show that the data is still 0. only erase operations can convert a 0 to a 1. note: see the appropriate command definitions table for program command sequence. figure 2. program operation chip erase command sequence chip erase is a six-bus-cycle operation. the chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the embedded erase algorithm. the device does not require the system to preprogram prior to erase. the embedded erase algo- rithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. the system is not required to provide any con- trols or timings during these operations. the command definitions table shows the address and data require- ments for the chip erase command sequence. any commands written to the chip during the embedded erase algorithm are ignored. note that a hardware reset during the chip erase operation imme- diately terminates the operation. the chip erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. start write program command sequence data poll from system verify data? no yes last address? no yes programming completed increment address embedded program algorithm in progress
am29f200b 15 the system can determine the status of the erase oper- ation by using dq7, dq6, dq2, or ry/by#. see write operation status for information on these status bits. when the embedded erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. figure 3 illustrates the algorithm for the erase opera- tion. see the erase/program operations tables in ac characteristics for parameters, and to the chip/sector erase operation timings for timing waveforms. sector erase command sequence sector erase is a six bus cycle operation. the sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. the command definitions table shows the address and data requirements for the sector erase command sequence. the device does not require the system to preprogram the memory prior to erase. the embedded erase algo- rithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase. the system is not required to provide any controls or timings during these operations. after the command sequence is written, a sector erase time-out of 50 s begins. during the time-out period, additional sector addresses and sector erase com- mands may be written. loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. the time between these additional cycles must be less than 50 s, otherwise the last address and command might not be accepted, and erasure may begin. it is recom- mended that processor interrupts be disabled during this time to ensure all commands are accepted. the interrupts can be re-enabled after the last sector erase command is written. if the time between additional sector erase commands can be assumed to be less than 50 s, the system need not monitor dq3. any command other than sector erase or erase suspend during the time-out period resets the device to reading array data. the system must rewrite the command sequence and any additional sector addresses and commands. the system can monitor dq3 to determine if the sector erase timer has timed out. (see the dq3: sector erase timer section.) the time-out begins from the rising edge of the final we# pulse in the command sequence. once the sector erase operation has begun, only the erase suspend command is valid. all other commands are ignored. note that a hardware reset during the sector erase operation immediately terminates the operation. the sector erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. when the embedded erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. the system can determine the status of the erase operation by using dq7, dq6, dq2, or ry/by#. refer to write operation status for infor- mation on these status bits. figure 3 illustrates the algorithm for the erase opera- tion. refer to the erase/program operations tables in the ac characteristics section for parameters, and to the sector erase operations timing diagram for timing waveforms. erase suspend/erase resume commands the erase suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. this command is valid only during the sector erase operation, including the 50 s time-out period during the sector erase command sequence. the erase suspend command is ignored if written during the chip erase operation or embedded program algo- rithm. writing the erase suspend command during the sector erase time-out immediately terminates the time-out period and suspends the erase operation. addresses are dont-cares when writing the erase suspend command. when the erase suspend command is written during a sector erase operation, the device requires a maximum of 20 s to suspend the erase operation. however, when the erase suspend command is written during the sector erase time-out, the device immediately ter- minates the time-out period and suspends the erase operation. after the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (the device erase suspends all sectors selected for erasure.) normal read and write timings and command definitions apply. reading at any address within erase-suspended sectors produces status data on dq7Cdq0. the system can use dq7, or dq6 and dq2 together, to determine if a sector is actively erasing or is erase-sus- pended. see write operation status for information on these status bits. after an erase-suspended program operation is com- plete, the system can once again read array data within non-suspended sectors. the system can determine the status of the program operation using the dq7 or dq6 status bits, just as in the standard program oper- ation. see write operation status for more information.
16 am29f200b the system may also write the autoselect command sequence when the device is in the erase suspend mode. the device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. when the device exits the autoselect mode, the device reverts to the erase suspend mode, and is ready for another valid operation. see autoselect command sequence for more information. the system must write the erase resume command (address bits are dont care) to exit the erase suspend mode and continue the sector erase operation. further writes of the resume command are ignored. another erase suspend command can be written after the device has resumed erasing. notes: 1. see the appropriate command definitions table for erase command sequence. 2. see dq3: sector erase timer for more information. figure 3. erase operation start write erase command sequence data poll from system data = ffh? no yes erasure completed embedded erase algorithm in progress
am29f200b 17 command definitions table 5. am29f200b command definitions legend: x = dont care ra = address of the memory location to be read. rd = data read from location ra during read operation. pa = address of the memory location to be programmed. addresses latch on the falling edge of the we# or ce# pulse, whichever happens later. pd = data to be programmed at location pa. data latches on the rising edge of we# or ce# pulse, whichever happens first. sa = address of the sector to be verified (in autoselect mode) or erased. address bits a16Ca12 uniquely select any sector. notes: 1. see table 1 for description of bus operations. 2. all values are in hexadecimal. 3. except when reading array or autoselect data, all bus cycles are write operations. 4. data bits dq15Cdq8 are dont cares for unlock and command cycles. 5. address bits a16Ca11 are dont cares for unlock and command cycles, unless sa or pa required. 6. no unlock or command cycles required when reading array data. 7. the reset command is required to return to reading array data when device is in the autoselect mode, or if dq5 goes high (while the device is providing status data). 8. the fourth cycle of the autoselect command sequence is a read cycle. 9. the data is 00h for an unprotected sector and 01h for a protected sector. see autoselect command sequence for more information. 10. the system may read and program in non-erasing sectors, or enter the autoselect mode, when in the erase suspend mode. the erase suspend command is valid only during a sector erase operation. 11. the erase resume command is valid only during the erase suspend mode. command sequence (note 1) bus cycles (notes 2C5) first second third fourth fifth sixth addr data addr data addr data addr data addr data addr data read (note 6) 1 ra rd reset (note 7) 1 xxx f0 manufacturer id word 4 555 aa 2aa 55 555 90 x00 01 byte aaa 555 aaa device id, top boot block word 4 555 aa 2aa 55 555 90 x01 2251 byte aaa 555 aaa x02 51 device id, bottom boot block word 4 555 aa 2aa 55 555 90 x01 2257 byte aaa 555 aaa x02 57 sector protect verify (note 9) word 4 555 aa 2aa 55 555 90 (sa) x02 xx00 xx01 byte aaa 555 aaa (sa) x04 00 01 program word 4 555 aa 2aa 55 555 a0 pa pd byte aaa 555 aaa chip erase word 6 555 aa 2aa 55 555 80 555 aa 2aa 55 555 10 byte aaa 555 aaa aaa 555 aaa sector erase word 6 555 aa 2aa 55 555 80 555 aa 2aa 55 sa 30 byte aaa 555 aaa aaa 555 erase suspend (note 10) 1 xxx b0 erase resume (note 11) 1 xxx 30 cycles autoselect (note 8)
18 am29f200b write operation status the device provides several bits to determine the status of a write operation: dq2, dq3, dq5, dq6, dq7, and ry/by#. table 6 and the following subsec- tions describe the functions of these bits. dq7, ry/ by#, and dq6 each offer a method for determining whether a program or erase operation is complete or in progress. these three bits are discussed first. dq7: data# polling the data# polling bit, dq7, indicates to the host system whether an embedded algorithm is in progress or completed, or whether the device is in erase sus- pend. data# polling is valid after the rising edge of the final we# pulse in the program or erase command sequence. during the embedded program algorithm, the device outputs on dq7 the complement of the datum pro- grammed to dq7. this dq7 status also applies to programming during erase suspend. when the embedded program algorithm is complete, the device outputs the datum programmed to dq7. the system must provide the program address to read valid status information on dq7. if a program address falls within a protected sector, data# polling on dq7 is active for approximately 2 m s, then the device returns to reading array data. during the embedded erase algorithm, data# polling produces a 0 on dq7. when the embedded erase algorithm is complete, or if the device enters the erase suspend mode, data# polling produces a 1 on dq7. this is analogous to the complement/true datum output described for the embedded program algorithm: the erase function changes all the bits in a sector to 1; prior to this, the device outputs the complement, or 0. the system must provide an address within any of the sectors selected for erasure to read valid status information on dq7. after an erase command sequence is written, if all sectors selected for erasing are protected, data# polling on dq7 is active for approximately 100 m s, then the device returns to reading array data. if not all selected sectors are protected, the embedded erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. when the system detects dq7 has changed from the complement to true data, it can read valid data at dq7C dq0 on the following read cycles. this is because dq7 may change asynchronously with dq0Cdq6 while output enable (oe#) is asserted low. the data# polling timings (during embedded algorithms) figure in the ac characteristics section illustrates this. table 6 shows the outputs for data# polling on dq7. figure 4 shows the data# polling algorithm. dq7 = data? yes no no dq5 = 1? no yes yes fail pass read dq7Cdq0 addr = va read dq7Cdq0 addr = va dq7 = data? start notes: 1. va = valid address for programming. during a sector erase operation, a valid address is an address within any sector selected for erasure. during chip erase, a valid address is any non-protected sector address. 2. dq7 should be rechecked even if dq5 = 1 because dq7 may change simultaneously with dq5. figure 4. data# polling algorithm
am29f200b 19 ry/by#: ready/busy# the ry/by# is a dedicated, open-drain output pin that indicates whether an embedded algorithm is in progress or complete. the ry/by# status is valid after the rising edge of the final we# pulse in the command sequence. since ry/by# is an open-drain output, several ry/by# pins can be tied together in parallel with a pull-up resistor to v cc . if the output is low (busy), the device is actively erasing or programming. (this includes programming in the erase suspend mode.) if the output is high (ready), the device is ready to read array data (including during the erase suspend mode), or is in the standby mode. table 6 shows the outputs for ry/by#. the timing dia- grams for read, reset, program, and erase shows the relationship of ry/by# to other signals. dq6: toggle bit i toggle bit i on dq6 indicates whether an embedded program or erase algorithm is in progress or complete, or whether the device has entered the erase suspend mode. toggle bit i may be read at any address, and is valid after the rising edge of the final we# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. during an embedded program or erase algorithm operation, successive read cycles to any address cause dq6 to toggle. (the system may use either oe# or ce# to control the read cycles.) when the operation is complete, dq6 stops toggling. after an erase command sequence is written, if all sectors selected for erasing are protected, dq6 toggles for approximately 100 m s, then returns to reading array data. if not all selected sectors are protected, the embedded erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. the system can use dq6 and dq2 together to deter- mine whether a sector is actively erasing or is erase- suspended. when the device is actively erasing (that is, the embedded erase algorithm is in progress), dq6 toggles. when the device enters the erase suspend mode, dq6 stops toggling. however, the system must also use dq2 to determine which sectors are erasing or erase-suspended. alternatively, the system can use dq7 (see the subsection on dq7: data# polling). if a program address falls within a protected sector, dq6 toggles for approximately 2 m s after the program command sequence is written, then returns to reading array data. dq6 also toggles during the erase-suspend-program mode, and stops toggling once the embedded program algorithm is complete. the write operation status table shows the outputs for toggle bit i on dq6. refer to figure 5 for the toggle bit algorithm, and to the toggle bit timings figure in the ac characteristics section for the timing diagram. the dq2 vs. dq6 figure shows the differences between dq2 and dq6 in graphical form. see also the subsection on dq2: toggle bit ii. dq2: toggle bit ii the toggle bit ii on dq2, when used with dq6, indi- cates whether a particular sector is actively erasing (that is, the embedded erase algorithm is in progress), or whether that sector is erase-suspended. toggle bit ii is valid after the rising edge of the final we# pulse in the command sequence. dq2 toggles when the system reads at addresses within those sectors that have been selected for era- sure. (the system may use either oe# or ce# to control the read cycles.) but dq2 cannot distinguish whether the sector is actively erasing or is erase-sus- pended. dq6, by comparison, indicates whether the device is actively erasing, or is in erase suspend, but cannot distinguish which sectors are selected for era- sure. thus, both status bits are required for sector and mode information. refer to table 6 to compare outputs for dq2 and dq6. figure 5 shows the toggle bit algorithm in flowchart form, and the section dq2: toggle bit ii explains the algorithm. see also the dq6: toggle bit i subsection. refer to the toggle bit timings figure for the toggle bit timing diagram. the dq2 vs. dq6 figure shows the dif- ferences between dq2 and dq6 in graphical form. reading toggle bits dq6/dq2 refer to figure 5 for the following discussion. when- ever the system initially begins reading toggle bit status, it must read dq7Cdq0 at least twice in a row to determine whether a toggle bit is toggling. typically, a system would note and store the value of the toggle bit after the first read. after the second read, the system would compare the new value of the toggle bit with the first. if the toggle bit is not toggling, the device has com- pleted the program or erase operation. the system can read array data on dq7Cdq0 on the following read cycle. however, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of dq5 is high (see the section on dq5). if it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped tog- gling just as dq5 went high. if the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. if it is still toggling, the device did not complete the operation successfully, and
20 am29f200b the system must write the reset command to return to reading array data. the remaining scenario is that the system initially determines that the toggle bit is toggling and dq5 has not gone high. the system may continue to monitor the toggle bit and dq5 through successive read cycles, determining the status as described in the previous paragraph. alternatively, it may choose to perform other system tasks. in this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of figure 5). dq5: exceeded timing limits dq5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. under these conditions dq5 produces a 1. this is a failure condition that indicates the program or erase cycle was not successfully completed. the dq5 failure condition may appear if the system tries to program a 1 to a location that is previously pro- grammed to 0. only an erase operation can change a 0 back to a 1. under this condition, the device halts the operation, and when the operation has exceeded the timing limits, dq5 produces a 1. under both these conditions, the system must issue the reset command to return the device to reading array data. dq3: sector erase timer after writing a sector erase command sequence, the system may read dq3 to determine whether or not an erase operation has begun. (the sector erase timer does not apply to the chip erase command.) if addi- tional sectors are selected for erasure, the entire time- out also applies after each additional sector erase com- mand. when the time-out is complete, dq3 switches from 0 to 1. the system may ignore dq3 if the system can guarantee that the time between additional sector erase commands will always be less than 50 m s. see also the sector erase command sequence section. after the sector erase command sequence is written, the system should read the status on dq7 (data# polling) or dq6 (toggle bit i) to ensure the device has accepted the command sequence, and then read dq3. if dq3 is 1, the internally controlled erase cycle has begun; all further commands (other than erase sus- pend) are ignored until the erase operation is complete. if dq3 is 0, the device will accept additional sector erase commands. to ensure the command has been accepted, the system software should check the status of dq3 prior to and following each subsequent sector erase command. if dq3 is high on the second status check, the last command might not have been accepted. table 6 shows the outputs for dq3. start no yes yes dq5 = 1? no yes toggle bit = toggle? no program/erase operation not complete, write reset command program/erase operation complete read dq7Cdq0 toggle bit = toggle? read dq7Cdq0 twice read dq7Cdq0 notes: 1. read toggle bit twice to determine whether or not it is toggling. see text. 2. recheck toggle bit because it may stop toggling as dq5 changes to 1. see text. figure 5. toggle bit algorithm (notes 1, 2) (note 1)
am29f200b 21 table 6. write operation status notes: 1. dq7 and dq2 require a valid address when reading status information. refer to the appropriate subsection for further details. 2. dq5 switches to 1 when an embedded program or embedded erase operation has exceeded the maximum timing limits. see dq5: exceeded timing limits for more information. operation dq7 (note 1) dq6 dq5 (note 2) dq3 dq2 (note 1) ry/by# standard mode embedded program algorithm dq7# toggle 0 n/a no toggle 0 embedded erase algorithm 0 toggle 0 1 toggle 0 erase suspend mode reading within erase suspended sector 1 no toggle 0 n/a toggle 1 reading within non-erase suspended sector data data data data data 1 erase-suspend-program dq7# toggle 0 n/a n/a 0
22 am29f200b absolute maximum ratings storage temperature plastic packages . . . . . . . . . . . . . . . C65 c to +150 c ambient temperature with power applied. . . . . . . . . . . . . . C55 c to +125 c voltage with respect to ground v cc (note 1) . . . . . . . . . . . . . . . . C2.0 v to +7.0 v a9 , oe# , and reset# (note 2). . . . . . . . . . . . C2.0 v to +12.5 v all other pins (note 1) . . . . . . . . . C0.5 v to +7.0 v output short circuit current (note 3) . . . . . . 200 ma notes: 1. minimum dc voltage on input or i/o pins is C0.5 v. during voltage transitions, input or i/o pins may overshoot v ss to C2.0 v for periods of up to 20 ns. see figure 6. maximum dc voltage on input or i/o pins is v cc +0.5 v. during voltage transitions, input or i/o pins may overshoot to v cc +2.0 v for periods up to 20 ns. see figure 7. 2. minimum dc input voltage on pins a9, oe#, and reset# is C0.5 v. during voltage transitions, a9, oe#, and reset# may overshoot v ss to C2.0 v for periods of up to 20 ns. see figure 6. maximum dc input voltage on pin a9 is +12.5 v which may overshoot to +13.5 v for periods up to 20 ns. 3. no more than one output may be shorted to ground at a time. duration of the short circuit should not be greater than one second. note: stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the op- erational sections of this data sheet is not implied. exposure of the device to absolute maximum rating conditions for ex- tended periods may affect device reliability. operating ranges commercial (c) devices ambient temperature (t a ) . . . . . . . . . . . 0c to +70c industrial (i) devices ambient temperature (t a ) . . . . . . . . . C40c to +85c extended (e) devices ambient temperature (t a ) . . . . . . . . C55c to +125c v cc supply voltages v cc for 5% devices . . . . . . . . . . .+4.75 v to +5.25 v v cc for 10% devices . . . . . . . . . . . .+4.5 v to +5.5 v note: operating ranges define those limits between which the functionality of the device is guaranteed. 20 ns 20 ns +0.8 v C0.5 v 20 ns C2.0 v figure 6. maximum negative overshoot waveform 20 ns 20 ns v cc +2.0 v v cc +0.5 v 20 ns 2.0 v figure 7. maximum positive overshoot waveform
am29f200b 23 dc characteristics ttl/nmos compatible notes: 1. the i cc current is typically less than 2 ma/mhz, with oe # at v ih . 2. maximum i cc specifications are tested with v cc = v ccmax . 3. i cc active while embedded program or erase algorithm is in progress. 4. not 100% tested. parameter symbol parameter description test conditions min max unit i li input load current v in = v ss to v cc , v cc = v cc max 1.0 a i lit a9, oe # , reset # input load current v cc = v cc max, a9, oe # , reset # = 12.5 v 50 a i lo output leakage current v out = v ss to v cc , v cc = v cc max 1.0 a i cc1 v cc active read current (notes 1, 2) ce # = v il , oe # = v ih byte 40 ma word 50 i cc2 v cc active program/erase current (notes 2, 3, 4) ce # = v il , oe # = v ih 60 ma i cc3 v cc standby current (note 2) v cc = v cc max, ce # = v ih , oe # = v ih 1.0 ma v il input low voltage C0.5 0.8 v v ih input high voltage 2.0 v cc + 0.5 v v id voltage for autoselect and temporary sector unprotect v cc = 5.0 v 11.5 12.5 v v ol output low voltage i ol = 5.8 ma, v cc = v cc min 0.45 v v oh output high voltage i oh = C2.5 ma, v cc = v cc min 2.4 v v lko low v cc lock-out voltage 3.2 4.2 v
24 am29f200b dc characteristics (continued) cmos compatible notes: 1. the i cc current listed is typically less than 2 ma/mhz, with oe# at v ih . 2. maximum i cc specifications are tested with v cc = v ccmax . 3. i cc active while embedded program or erase algorithm is in progress. 4. not 100% tested. 5. i cc3 for extended temperature is 20 a max (>+85 c) . parameter symbol parameter description test conditions min typ max unit i li input load current v in = v ss to v cc , v cc = v cc max 1.0 a i lit a9, oe # , reset # input load current v cc = v cc max; a9, oe # , reset # = 12.5 v 50 a i lo output leakage current v out = v ss to v cc , v cc = v cc max 1.0 a i cc1 v cc active read current (notes 1, 2) ce # = v il , oe # = v ih byte 20 40 ma word 28 50 i cc2 v cc active program/erase current (notes 2, 3, 4) ce # = v il , oe # = v ih 30 50 ma i cc3 v cc standby current note (note 5) ce # = v cc 0.5 v, oe # = v ih 15a v il input low voltage C0.5 0.8 v v ih input high voltage 0.7 x v cc v cc + 0.3 v v id voltage for autoselect and temporary sector unprotect v cc = 5.0 v 11.5 12.5 v v ol output low voltage i ol = 5.8 ma, v cc = v cc min 0.45 v v oh1 output low voltage i oh = C2.5 ma, v cc = v cc min 0.85 v cc v v oh2 i oh = C100 a, v cc = v cc min v cc C 0.4 v v lko low v cc lock-out voltage 3.2 4.2 v
am29f200b 25 test conditions table 7. test specifications key to switching waveforms 2.7 k w c l 6.2 k w 5.0 device under te s t figure 8. test setup note: diodes are in3064 or equivalents. test condition -45, -50, -55 all others unit output load 1 ttl gate output load capacitance, c l (including jig capacitance) 30 100 pf input rise and fall times 5 20 ns input pulse levels 0.0C3.0 0.45C2.4 v input timing measurement reference levels 1.5 0.8, 2.0 v output timing measurement reference levels 1.5 0.8, 2.0 v waveform inputs outputs steady changing from h to l changing from l to h dont care, any change permitted changing, state unknown does not apply center line is high impedance state (high z)
26 am29f200b ac characteristics read operations notes: 1. not 100% tested. 2. see figure 8 and table 7 for test specifications figure 9. read operations timings parameter description speed options jedec std test setup -45 -50 -55 -70 -90 -120 unit t avav t rc read cycle time (note 1) min 45 50 55 70 90 120 ns t avqv t acc address to output delay ce# = v il oe# = v il max4550557090120ns t elqv t ce chip enable to output delay oe# = v il max4550557090120ns t glqv t oe output enable to output delay (note 1) max303030303550ns t ehqz t df chip enable to output high z (note 1) max202020202030ns t ghqz t df output enable to output high z (note 1) max202020202030ns t oeh output enable hold time (note 1) read min 0 ns toggle and data# polling min 10 ns t axqx t oh output hold time from addresses, ce# or oe#, whichever occurs first (note 1) min 0 ns t ce outputs we# addresses ce# oe# high z output valid high z addresses stable t rc t acc t oeh t oe 0 v ry/by# reset# t df t oh
am29f200b 27 ac characteristics hardware reset (reset#) note: not 100% tested. parameter description all speed options jedec std test setup unit t ready reset# pin low (during embedded algorithms) to read or write (see note) max 20 m s t ready reset# pin low (not during embedded algorithms) to read or write (see note) max 500 ns t rp reset# pulse width min 500 ns t rh reset# high time before read (see note) min 50 ns t rb ry/by# recovery time min 0 ns reset# ry/by# ry/by# t rp t ready reset timings not during embedded algorithms t ready ce#, oe# t rh ce#, oe# reset timings during embedded algorithms reset# t rp t rb figure 10. reset# timings
28 am29f200b ac characteristics word/byte configuration (byte#) parameter speed options jedec std description -45 -50 -55 -70 -90 -120 unit t elfl/ t elfh ce# to byte# switching low or high max 5 ns t flqz byte# switching low to output high z max 20 20 20 20 20 30 ns t fhqv byte# switching high to output active max 45 50 55 70 90 120 ns dq15 output data output (dq0Cdq7) ce# oe# byte# t elfl dq0Cdq14 data output (dq0Cdq14) dq15/a-1 address input t flqz byte# switching from word to byte mode dq15 output data output (dq0Cdq7) byte# t elfh dq0Cdq14 data output (dq0Cdq14) dq15/a-1 address input t fhqv byte# switching from byte to word mode figure 11. byte# timings for read operations note: refer to the erase/program operations table for t as and t ah specifications. figure 12. byte# timings for write operations ce# we# byte# the falling edge of the last we# signal t hold (t ah ) t set (t as )
am29f200b 29 ac characteristics erase/program operations notes: 1. not 100% tested. 2. see the erase and programming performance section for more information. parameter speed options jedec std description -45 -50 -55 -70 -90 -120 unit t avav t wc write cycle time (note 1) min 45 50 55 70 90 120 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 45 45 45 45 50 ns t dvwh t ds data setup time min 25 25 25 30 45 50 ns t whdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghwl t ghwl read recovery time before write (oe# high to we# low) min 0 ns t elwl t cs ce# setup time min 0 ns t wheh t ch ce# hold time min 0 ns t wlwh t wp write pulse width min 30 30 30 35 45 50 ns t whwl t wph write pulse width high min 20 ns t whwh1 t whwh1 programming operation (note 2) byte typ 7 s word typ 12 t whwh2 t whwh2 sector erase operation (note 2) typ 1 sec t vcs v cc setup time (note 1) min 50 s t rb recovery time from ry/by# min 0 ns t busy program/erase valid to ry/by# delay min 30 30 30 30 35 50 ns
30 am29f200b ac characteristics oe# we# ce# v cc data addresses t ds t ah t dh t wp pd t whwh1 t wc t as t wph t vcs 555h pa pa read status data (last two cycles) a0h t cs status d out program command sequence (last two cycles) ry/by# t rb t busy t ch pa notes: 1. pa = program address, pd = program data, d out is the true data at the program address. 2. illustration shows device in word mode. figure 13. program operation timings
am29f200b 31 ac characteristics oe# ce# addresses v cc we# data 2aah sa t ah t wp t wc t as t wph 555h for chip erase 10 for chip erase 30h t ds t vcs t cs t dh 55h t ch in progress complete t whwh2 va va erase command sequence (last two cycles) read status data ry/by# t rb t busy notes: 1. sa = sector address (for sector erase), va = valid address for reading status data ( see write operation status). 2. illustration shows device in word mode. figure 14. chip/sector erase operation timings
32 am29f200b ac characteristics we# ce# oe# high z t oe high z dq7 dq0Cdq6 ry/by# t busy complement true addresses va t oeh t ce t ch t oh t df va va status data complement status data true valid data valid data t acc t rc note: va = valid address. illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. figure 15. data# polling timings (during embedded algorithms) we# ce# oe# high z t oe dq6/dq2 ry/by# t busy addresses va t oeh t ce t ch t oh t df va va t acc t rc valid data valid status valid status (first read) (second read) (stops toggling) valid status va note: va = valid address; not required for dq6. illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle figure 16. toggle bit timings (during embedded algorithms)
am29f200b 33 ac characteristics temporary sector unprotect note: not 100% tested. parameter all speed options jedec std description unit t vidr v id rise and fall time (see note) min 500 ns t rsp reset# setup time for temporary sector unprotect min 4 s note: the system may use oe# or ce# to toggle dq2 and dq6. dq2 toggles only when read at an address within the erase-sus - pended sector. figure 17. dq2 vs. dq6 enter erase erase erase enter erase suspend program erase suspend read erase suspend read erase we# dq6 dq2 erase complete erase suspend suspend program resume embedded erasing reset# t vidr 12 v 0 or 5 v ce# we# ry/by# t vidr t rsp program or erase command sequence 0 or 5 v figure 18. temporary sector unprotect timing diagram
34 am29f200b ac characteristics alternate ce# controlled erase/program operations notes: 1. not 100% tested. 2. see the erase and programming performance section for more information. parameter speed options jedec std description -45 -50 -55 -70 -90 -120 unit t avav t wc write cycle time (note 1) min 45 50 55 70 90 120 ns t avel t as address setup time min 0 ns t elax t ah address hold time min 45 45 45 45 45 50 ns t dveh t ds data setup time min 25 25 25 30 45 50 ns t ehdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghel t ghel read recovery time before write (oe# high to we# low) min 0 ns t wlel t ws we# setup time min 0 ns t ehwh t wh we# hold time min 0 ns t eleh t cp ce# pulse width min 30 30 30 35 45 50 ns t ehel t cph ce# pulse width high min 20 ns t whwh1 t whwh1 programming operation (note 2) byte typ 7 s word typ 12 t whwh2 t whwh2 sector erase operation (note 2) typ 1 sec
am29f200b 35 ac characteristics t ghel t ws oe# ce# we# reset# t ds data t ah addresses t dh t cp dq7# d out t wc t as t cph pa data# polling a0 for program 55 for erase t rh t whwh1 or 2 ry/by# t wh pd for program 30 for sector erase 10 for chip erase 555 for program 2aa for erase pa for program sa for sector erase 555 for chip erase t busy notes: 1. pa = program address, pd = program data, sa = sector address, dq7# = complement of data input, d out = array data. 2. figure indicates the last two bus cycles of the command sequence, with the device in word mode. figure 19. alternate ce# controlled write operation timings
36 am29f200b erase and programming performance notes: 1. typical program and erase times assume the following conditions: 25c, 5.0 v v cc , 1,000,000 cycles. additionally, programming typicals assume checkerboard pattern. 2. under worst case conditions of 90c, v cc = 4.5 v (v cc = 4.75 v for 5% devices), 1,000,000 cycles. 3. the typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum byte program time listed. 4. in the pre-programming step of the embedded erase algorithm, all bytes are programmed to 00h before erasure. 5. system-level overhead is the time required to execute the four-bus-cycle command sequence for programming. see table 1 for further information on command definitions. 6. the device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles. latchup characteristics note: includes all pins except v cc . test conditions: v cc = 5.0 v, one pin at a time. tsop and so pin capacitance notes: 1. sampled, not 100% tested. 2. test conditions t a = 25 c, f = 1.0 mhz. data retention parameter limits comments typ (note 1) max (note 2) unit sector erase time 1 8 sec excludes 00h programming prior to erasure (note 4) chip erase time 5 sec byte programming time 7 300 s excludes system-level overhead (note 5) word programming time 12 500 s chip programming time (note 3) 1.8 5.4 sec parameter description min max input voltage with respect to v ss on all i/o pins C1.0 v v cc + 1.0 v v cc current C100 ma +100 ma parameter symbol parameter description test setup typ max unit c in input capacitance v in = 0 6 7.5 pf c out output capacitance v out = 0 8.5 12 pf c in2 control pin capacitance v in = 0 8 10 pf parameter test conditions min unit minimum pattern data retention time 150 c 10 years 125 c 20 years
am29f200b 37 physical dimensions so 04444-pin small outline package dwg rev ac; 10/99
38 am29f200b physical dimensions ts 04848-pin standard thin small outline package dwg rev aa; 10/99
am29f200b 39 physical dimensions tsr04848-pin reverse thin small outline package dwg rev aa; 10/99
40 am29f200b revision summary revision a (july 1998) global made formatting and layout consistent with other data sheets. used updated common tables and diagrams revision b (january 1999) distinctive characteristics added bullet for 20-year data retention at 125 c ordering information optional processing : deleted b = burn-in. dc characteristicsttl/nmos compatible i cc1 , i cc2 , i cc3 : added note 2 maximum i cc specifi- cations are tested with v cc = v ccmax . dc characteristicscmos compatible i cc1 , i cc2 , i cc3 : added note 2 maximum i cc specifi- cations are tested with v cc = v ccmax . ac characteristics figure 15. data# polling timings (during embedded algorithms) : added text to note. figure 16. toggle bit timings (during embedded algo- rithms) : added text to note. revision b+1 (april 12, 1999) product selector guide the 55 ns option now has a v cc operating range of 10%. revision b+2 (july 2, 1999) global added references to availability of device in known good die (kgd) form. revision c (november 12, 1999) ac characteristicsfigure 13. program operations timing and figure 14. chip/sector erase operations deleted t ghwl and changed oe# waveform to start at high. physical dimensions replaced figures with more detailed illustrations. revision d (november 29, 2000) added table of contents. ordering information deleted burn-in option. trademarks copyright ? 2000 advanced micro devices, inc. all rights reserved. amd, the amd logo, and combinations thereof are registered trademarks of advanced micro devices, inc. expressflash is a trademark of advanced micro devices, inc. product names used in this publication are for identification purposes only and may be trademarks of their respective companies .

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